1. Parameters for epitaxial growth

1.1 Beam-equivalent-pressure (BEP) ratios:

    Group V/group III =2~4.5  for GaIn(Sb);

    Group V/group III =6      optimum ratio for InAs.

1.2 molar fractionAn In molar fraction decidesboth band gap and alternating interfaces(IFs):

Band gap energy in the 8~12um(atmosphere window) 20% In in the ternary (GaIn)Sb layer.

In mole fraction can change the type of alternating interface.

1.3 Correct setting of period and average strain

Individual GaIn(Sb) layer thickness

Individual InAs layer thickness

In molar fraction in the ternary (GaIn)Sb