Antimonide-relaeted superlattices(SLs)

  1. Parameters for epitaxial growth

1.1 Beam-equivalent-pressure (BEP) ratios:

    Group V/group III =2~4.5  for GaIn(Sb);

    Group V/group III =6      optimum ratio for InAs.

1.2 molar fractionAn In molar fraction decidesboth band gap and alternating interfaces(IFs):

Band gap energy in the 8~12um(atmosphere window) 20% In in the ternary (GaIn)Sb layer.

In mole fraction can change the type of alternating interface.

1.3 Correct setting of period and average strain

Individual GaIn(Sb) layer thickness

Individual InAs layer thickness

In molar fraction in the ternary (GaIn)Sb

第一次在博客安家咯

纪念一下自己安家的第一份博客

主要是一些关于IR detector制作工艺的文章,比较喜欢这里的干净劲

要是大家对某些文章有兴趣可以email:fairless.lee@gmail.com

主要是喜欢这里的公式输入,下面测试一下:

$$M=\frac{1}{1-\int_L^0 f(x)\mathrm{d}x}$$

这是APD参数确定的一个重要公式。

太完美了!!